Solo testo/Text only

Innovative technologies for non volatile memories

Dr. Barbara de Salvo
CEA Leti, Grenoble, France

16 hours, 4 credits

2011

Dipartimento di Ingegneria dell'Informazione: Elettronica, Informatica, Telecomunicazioni, via Caruso, meeting room, ground floor

Contacts: Prof. Giuseppe Iannaccone

Aims

This series of lessons will cover semiconductor technologies for non volatile memories, ranging from aggressively scaled down "conventional" flash memories, to more innovative approaches required to sustain Moore's law and enable future memory-intensive ICT applications.

Syllabus

• Semiconductor Industry Overview
• The cyclical semiconductor market
• The semiconductor memory market
• The structural evolution of the semiconductor
• Research on Advanced Charge Storage
• Key features of Flash
• Flash technology scaling
• Innovative paths in silicon NVM technologies
• Silicon nanocrystal memories
• High-k/metal gate stacks for “TANOS” memories
• FinFlash
• Future Paths of Innovation
• 3D integration of charge-storage memories
• Alternative technologies (Ferro RAMs. Magnetic RAMs. Phase-change RAMs. Resistive RAMs)