URSI ISSSE'98
International Symposium on Signals, Systems, and Electronics
29 September-02 October 1998, Palazzo dei Congressi, PISA, Italy


SESSION WM1
Advances in Devices
Organizer/Chairman: Alain Cappy, University of Lille, France

WM1.1
S.D. Wadsworth, R. A. Davies, I. Davies, S.P. Marsh, N.A. Peniket, W.A. Phillips, R.H. Wallis (GEC-Marconi, UK), "GaInP/GaAs HBTs : State of the Art and Future Trends"

WM1.2
W. Prost, U. Auer, A. Brennemann, G. Janssen, R. M. Bertenburg, W. Brockerhoff, F.-J. Tegude (Gerhard-Mercator-Universitaet, Germany), C. Pacha, K. F. Goser (University of Dortmund, Germany), E. Bushehri (Middlessex University, UK), "InP-based HFET's and RTD's for High Speed Digital Circuitry"

WM1.3
M. Mouis, A. Chantre (France Telecom), "VLSI Integration of SiGe Epitaxial Base Bipolar Transistors"

WM1.4
C. R. Bolognesi (Simon Fraser University, Canada), "InAs HFETs, State of the Art and Future Trends"

WM1.5
H. Jaeckel (Swiss Federal Institute of Technology Zuerich, Switzerland), "InP HBTs: State of the Art and Future Trends"

WM1.6
H. L. Hartnagel (Technische Universitaet Darmstadt, Germany), "Nano-Technology-Device Prospects: Quantum Dots and Transistors for Ultracompact Integration and Teraherz Analogue Applications"


For further information, please contact:

vitetta@iet.unipi.it

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Last updated August 27, 1998