Simulation and Benchmarking of Beyond-CMOS Logic Devices

Dr. Dmitri E. Nikonov
Intel Corporation

20 hours, 5 credits

May 22 - May 24, 2013

Dipartimento di Ingegneria dell'Informazione, via Caruso, meeting room, ground floor

Contacts: Ing. Gianluca Fiori

Abstract

Complementary metal-oxide-semiconductor (CMOS) field effect transistors (FET) underpinned the development of electronics and information technology for the last 30 years. In an amazing saga of development, the semiconductor industry (with a leading role of Intel) has shrunk the size of these transistors from 1000nm to 22nm. As this size approaches atomic limits, the research community is under pressure to find devices which complement CMOS and enable further improvement of performance of integrated circuits.

The course aims to familiarize the student with methods used to simulate and evaluate such devices. They fall into two large categories: quantum transport (Keldysh’s Non-Equilibrium Green’s functions, NEGF) and magnetization dynamics (Landau-Lifshitz-Gilbert equations, LLG). The lectures will describe fundamentals of these methods and examples of their use. Operation and simulation of a wide class of beyond CMOS devices, electronic and spintronic ones, is discussed. Finally, their use in integrated logic circuits and benchmarking of their performance are presented.

Syllabus

• CMOS transistor scaling
• Overview of beyond CMOS devices
• Introduction to non-equilibrium Green's functions (NEGF)
• Scattering in quantum transport
• Graphene and carbon nanotube devices
• Spin transport and magnetoresistance
• Spin and magnetization dynamics, Landau-Lifshitz-Gilbert equations (LLG)
• Nanomagnetic dynamics with OOMMF
• Magnetoelectric effects
• Benchmarking methodology for beyond-CMOS devices