Noise as a diagnostic tool in materials and electronic devices
Instructor: Prof. L. K. J. Vandamme
Affiliation: Eindhoven University of Technology, Department of Electrical Engineering
Duration: 12 hours
Period: March 9 - 23, 2005
Place: Dipartimento di Ingegneria dell'Informazione: Elettronica, Informatica, Telecomunicazioni, via G. Caruso, meeting room, ground floor
Credits: 3
Final test: yes
Contacts: Prof. Massimo Macucci
Contents:
- Introduction
- Short history of noise research, some objectives and definitions, measuring set up
- Noise sources, origins, and remedies
- Noise sources: thermal, shot, generation-recombination, RTS (random telegraph signal noise) and 1/f noise
- Noise equivalent circuits for passive components
- Resistance fluctuations in networks and continuous media
- Sensitivity coefficient for two ports
- Sensitivity coefficient for four ports
- Current crowding increases the effect of conductance fluctuations
- Experimental facts on 1/f noise in metals and semiconductors
- Hooge’s empirical relation for the 1/f noise
- Noise in electronic devices: Resistors, MOSFET, Diodes, BJT
- Resistors (Au-layers, poly Si, poly SiGe, thick film resistors)
- Diodes (shot noise, 1/f and RTS noise; perimeter or bulk contributions; faster diodes are noisier)
- MOSFETs
- Flicker noise in MOSFETs, is it a surface or bulk effect; is it due to trapping or due to mobility fluctuations?
- Circuit oriented noise equations in terms of the 1/f noise parameter for biasing conditions in the Ohmic/Saturation/or Sub-threshold region
- Faster is noisier
- Review of experimental results
- Misunderstandings about 1/f noise in MOSFETs
- RTS noise is an additional number-fluctuation noise on top of 1/f noise
- Number fluctation/mobility fluctuation controversy; controversy about the bulk or surface origin
- BJTs and HBTs
- 1/f noise in bipolars (perimeter?)
- Corner frequency: a figure of merit?
- Is the ratio of the corner frequency to the transition frequency a new figure of merit?
- An equivalent circuit: problems and formulas
- How to measure the dominant noise source by coherence techniques
- Experimental results on poly-emitter BJTs, HBTs
- Noise figure at medium frequencies
- Discussion and conclusions
- 1/f Noise as a diagnostic tool for quality evaluation of materials and devices
- Different noise types such as: shot noise, burst noise or RTS, generation recombination noise and the omnipresent 1/f noise have different meanings in view of reliability diagnostics
- Current crowding makes the omnipresent 1/f noise a sensitive quality indicator of external and internal contacts in materials and devices (e.g. submicron-MODFETs, conductive adhesives, thin film transistors, poly silicon layers)
- 1/f noise in contacts (with and without complications)
- Low frequency noise as an indicator of reliability problems will be discussed in diode type devices (e.g. p-n junctions, Schottky-barriers and bipolars) and in resistor type devices
- Some case studies: polymer transistor, nanoparticle dielectrics, MESFETs, MODFETs, solar cells and LEDs
- The correlation between noise in devices and the reliability is explained
- Noise measurements are often more sensitive and less destructive than classical tests after accelerated life tests
- Low frequency noise measuring set ups
- Time domain analysis for non-Gaussian noise mixed up with Gaussian noise (RTS with e.g. 1/f noise) and analysis in frequency domain
- Resistance fluctuations from measured voltage or current fluctuations
- Calculated current noise spectral density from the voltage noise spectral density (3 cases)
- Noise characterization of amplifiers
- Instrumentation
- Telecommunication
- Voltage amplifiers in series
- Amplifier choice, low noise current or voltage amplifier, transformer amplifier, or a correlation measurement
- Sample design based on a high corner frequency value, four contacts on a sample is not always a guarantee of contact noise suppression
- Measuring setup (band pass filtering or line spectra, FFT)
- Shielding
- Exercises
- References